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Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs

✍ Scribed by Poggi, A.; Moscatelli, F.; Solmi, S.; Nipoti, R.

Book ID: 114619478
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 836 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.926640

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