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Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs

✍ Scribed by Weber, O.; Takagi, S.

Book ID: 114619506
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 871 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.927388

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