𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Excitonic States of GaN/AlGaN Quantum Well Structures under High Density of Excitation

✍ Scribed by M.A. Jacobson; D.K. Nelson; N. Grandjean; J. Massies; P. Bigenwald; A. Kavokin


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
98 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Properties of Quantum Well Excitons in G
✍ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 195 KB πŸ‘ 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well

Structure Dependence of Electron Mobilit
✍ Hoshino, K. ;Someya, T. ;Arakawa, Y. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 95 KB πŸ‘ 2 views

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the