Excitonic States of GaN/AlGaN Quantum Well Structures under High Density of Excitation
β Scribed by M.A. Jacobson; D.K. Nelson; N. Grandjean; J. Massies; P. Bigenwald; A. Kavokin
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 98 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the