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Electronic structure of cubic GaN/AlGaN quantum wells

✍ Scribed by J Arriaga; H Hernández-Cocoletzi; D.A Contreras-Solorio


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
69 KB
Volume
17
Category
Article
ISSN
1386-9477

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✍ Hoshino, K. ;Someya, T. ;Arakawa, Y. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 2 views

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the