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Exciton stark shift in graded GaAs/AlxGa1−xAs quantum wells

✍ Scribed by E.C. Ferreira; J.A.P. da Costa; J.A.K. Freire; V.N. Freire; G.A. Farias


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
83 KB
Volume
17
Category
Article
ISSN
1386-9477

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We calculated the exciton binding energy and energy levels in GaAs=Al0:3Ga0:7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic ÿeld e ects. Numerical results for GaAs=Al0:3Ga0:7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV