Stark effect in the magneto-exciton energy in GaAs/AlxGa1−xAs double quantum wells

✍ Scribed by E.C. Ferreira; J.A.P. Da Costa; J.A.K. Freire

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 160 KB
• Volume: 17
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00798-1

✦ Synopsis

We calculated the exciton binding energy and energy levels in GaAs=Al0:3Ga0:7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic ÿeld e ects. Numerical results for GaAs=Al0:3Ga0:7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV with respect to the abrupt well system (50 A wide) when a 10 A interface is considered.