The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier hei
Exciton relaxation in Ga1 − xInxAs/GaAs self-organized quantum dots
✍ Scribed by J.X. Shen; Y. Oka; H.H. Cheng; F.Y. Tsai; C.P. Lee
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 84 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The exciton dynamics in Ga 1-x In x As/GaAs self-organized quantum dots grown on GaAs (111)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells.
📜 SIMILAR VOLUMES
Self-organized dots of CdTe and Cd1-xMnxTe (x = 0:06) were fabricated on the Zn1-yCdyTe (1 0 0) surface by MBE. The dot formation on ZnTe was not di erent between CdTe and Cd1-xMnxTe but di erent features appeared with the increase of y. In CdTe dots, the density was decreased continuously with y an