Exciton recombination in δ-doped type-II GaAs/AlAs superlattices
✍ Scribed by K. S. Zhuravlev; A. K. Sulaimanov; A. M. Gilinskii; L. S. Braginskii; A. I. Toropov; A. K. Bakarov
- Book ID
- 110129946
- Publisher
- Springer
- Year
- 2002
- Tongue
- English
- Weight
- 76 KB
- Volume
- 36
- Category
- Article
- ISSN
- 1063-7826
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We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of \(\Gamma_{1}, X_{1}\) and \(X_{3}\) electron states
Steady-state and time-resolved photoluminescence of (GaAs) 7 (AlAs) 9 type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T > 30 K, the domi