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Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices

✍ Scribed by A.K Sulaimanov; L.S Braginsky; A.M Gilinsky; A.I Toropov; A.K Bakarov; K.S Zhuravlev


Book ID
108418110
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
134 KB
Volume
216
Category
Article
ISSN
0169-4332

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✍ T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 89 KB

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba