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Excitation and temperature tuned photoluminescence in HgGa2S4 single crystals

✍ Scribed by V.V Ursaki; P.C Ricci; I.M Tiginyanu; A Anedda; N.N Syrbu; V.E Tezlevan


Book ID
108356676
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
173 KB
Volume
63
Category
Article
ISSN
0022-3697

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Temperature and excitation intensity tun
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Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (Ξ» exc = 532 nm), and at T = 26 K with intrinsic excitation source (Ξ» exc = 406 nm