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Evolution of the growth interface in liquid phase diffusion growth of bulk SiGe single crystals

✍ Scribed by M. Yildiz; S. Dost; B. Lent

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
213 KB
Volume
41
Category
Article
ISSN
0232-1300

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Silicon transport under rotating and com
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## Abstract The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72‐hour growth periods produced some single crystal sections. Single and polycrystalline sections of the pr

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## Abstract Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three‐zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sect