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Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

✍ Scribed by Matsubara, Hiroshi; Sasada, Takashi; Takenaka, Mitsuru; Takagi, Shinichi

Book ID: 115470698
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 327 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2959731

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