Evidence for oxygen vacancy formation in HZSM-5 at high temperature
โ Scribed by Balint, Ioan; Springuel-Huet, Marie-Anne; Aika, Ken-ichi; Fraissard, Jacques
- Book ID
- 121343016
- Publisher
- Royal Society of Chemistry
- Year
- 1999
- Tongue
- English
- Weight
- 196 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1463-9076
- DOI
- 10.1039/A903547H
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๐ SIMILAR VOLUMES
Radioactive 57 Mn รพ ions รฐT 1=2 ยผ 1:5 minร of 60 keV energy have been implanted to low fluences into silicon crystals held at temperatures of 470-820 K: Most of the implantation damage is annealed during the 57 Mn lifetime and the 57 Mn atoms are incorporated on substitutional sites. Interstitial Fe
We have studied the stability of Pr 2 NiO 4ุ under pure oxygen 6ow by in situ measurement of its weight versus T. Above 8503C a fast oxidation is observed corresponding to the ex-solution of PrO y species and to the formation of metallic Pr 4 Ni 3 O 10ุx . This reaction is not reversible. The quanti