On the kinetics of the formation of interstitial Fe–vacancy pairs in silicon at high temperatures

✍ Scribed by H.P. Gunnlaugsson; G. Weyer; N.E. Christensen; M. Dietrich; M. Fanciulli; K. Bharuth-Ram; R. Sielemann; A. Svane; the ISOLDE Collaboration

• Book ID: 104080747
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 227 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.141

✦ Synopsis

Radioactive 57 Mn þ ions ðT 1=2 ¼ 1:5 minÞ of 60 keV energy have been implanted to low fluences into silicon crystals held at temperatures of 470-820 K: Most of the implantation damage is annealed during the 57 Mn lifetime and the 57 Mn atoms are incorporated on substitutional sites. Interstitial Fe ðFe i Þ and a vacancy are created at these temperatures by the recoil in the nuclear decay of the substitutional 57 Mn atoms to the M .

ossbauer state ðT 1=2 ¼ 100 nsÞ of the 57m Fe daughter atoms. The formation of Fe i -V pairs during the lifetime of the state has been observed by M .

ossbauer spectroscopy; the temperature-dependent kinetics of the process is consistent with the known Fe i diffusion activation energies and not with those for vacancies.