Electron irradiation and the formation of vacancy–interstitial pairs in diamond
✍ Scribed by Kiflawi, I; Collins, A T; Iakoubovskii, K; Fisher, D
- Book ID
- 118734617
- Publisher
- Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 650 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0953-8984
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📜 SIMILAR VOLUMES
First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the d
Radioactive 57 Mn þ ions ðT 1=2 ¼ 1:5 minÞ of 60 keV energy have been implanted to low fluences into silicon crystals held at temperatures of 470-820 K: Most of the implantation damage is annealed during the 57 Mn lifetime and the 57 Mn atoms are incorporated on substitutional sites. Interstitial Fe