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Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

✍ Scribed by Chun-Chang Lu; Kuei-Shu Chang-Liao; Yu-Fen Cheng; Tien-Ko Wang


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
621 KB
Volume
86
Category
Article
ISSN
0167-9317

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