Thermal vacancy formation and positron–vacancy interaction in Ti3Al at high temperatures
✍ Scribed by Würschum, R.; Kümmerle, E. A.; Badura-Gergen, K.; Seeger, A.; Herzig, Ch.; Schaefer, H.-E.
- Book ID
- 115465931
- Publisher
- American Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 336 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.362880
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Radioactive 57 Mn þ ions ðT 1=2 ¼ 1:5 minÞ of 60 keV energy have been implanted to low fluences into silicon crystals held at temperatures of 470-820 K: Most of the implantation damage is annealed during the 57 Mn lifetime and the 57 Mn atoms are incorporated on substitutional sites. Interstitial Fe
## Abstract The compound, Ti~3~Al~0.7~Si~0.3~C~2~, was synthesized by hot pressing a powder mixture of TiC~X~ (x = 0.6), Al and Si. Its oxidation at 900 and 1000 °C in air for up to 50 h resulted in the formation of rutile‐TiO~2~, α‐Al~2~O~3~ and amorphous SiO~2~. The oxide scales formed consisted