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EVG's low temperature plasma bonding chamber


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
169 KB
Volume
17
Category
Article
ISSN
0961-1290

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Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 ยฐC. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such