Evaluation of thermal oxide of SOI layers by the SPE method

✍ Scribed by Masahito Kodama; Hirofumi Funabasi; Yasuichi Mitsushima; Yasunori Tuga

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 202 KB
• Volume: 80
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/(sici)1520-6432(199712)80:12<50::aid-ecjb6>3.0.co;2-v

✦ Synopsis

The authors have investigated the SPE method, using the low-pressure chemical vapor deposition (LPCVD) system that is usually utilized in the Si LSI process. When the SOI layer fabricated by this method is to be applied to a MOS device, the oxide SOI layer to be used as the gate oxide film must be evaluated. From this viewpoint, the authors attempted to evaluate the oxidation rate of the SOI layer and the electrical properties of the oxide film. The electric field-electric current density characteristics, the electric breakdown voltage distribution, and the time-dependent dielectric breakdown (TDDB) characteristics are measured. We found that the oxidation rate of the SOI layer is the same as that of the Si substrate. We also found that the electrical properties of the SOI layer are almost the same as those of the oxide film on the Si substrate. In other words, the oxide layer of the SOI film can be considered to be the same as the oxide film of the Si substrate.