A thermally stable Ni-based ohmic contact is one of the most attractive contact materials for developing superior GaAs devices. To understand the interface reaction between an Ni thin film and a GaAs wafer, a combined grazing-incidence and grazing-takeoff x-ray fluorescence (GIT-XRF) method was appl
โฆ LIBER โฆ
Evaluation of Ni/Mn multilayer samples with glancing-incidence and take-off X-ray fluorescence analysis
โ Scribed by S. Sato,K. Tsuji,K. Hirokawa
- Book ID
- 118290342
- Publisher
- Springer
- Year
- 1996
- Tongue
- English
- Weight
- 345 KB
- Volume
- 62
- Category
- Article
- ISSN
- 1432-0630
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