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Evaluation of 850°C wet oxide as the gate dielectric in a 0.8-μm CMOS process

✍ Scribed by Wei, C.-Y.; Nissan-Cohen, Y.; Woodbury, H.H.

Book ID: 114538918
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 779 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.97406

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