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On the SiO2-based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology

✍ Scribed by Yo-Sheng Lin; Huan-Tsung Huang; Chung-Cheng Wu; Ying-Keung Leung; Hsu-Yang Pan; Tse-En Chang; Wei-Ming Chen; Jung-Jih Liaw; Diaz, C.H.


Book ID
114539020
Publisher
IEEE
Year
2002
Tongue
English
Weight
238 KB
Volume
49
Category
Article
ISSN
0018-9383

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