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Etch characteristics of gallium indium zinc oxide thin films in a HBr/Ar plasma

✍ Scribed by Eun Ho Kim; Yu Bin Xiao; Seon Mi Kong; Chee Won Chung

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
877 KB
Volume
205
Category
Article
ISSN
0257-8972

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✦ Synopsis

Gallium indium zinc oxide

High density plasma etching HBr/Ar Oxide thin film transistor Gallium indium zinc oxide (GIZO) thin films patterned with a photoresist (PR) were dry etched using inductively coupled plasma (ICP) of HBr/Ar gas. The etch rate of the GIZO films and the etch selectivity of GIZO/PR decreased gradually as HBr gas was added to Ar. In addition, the etch rate increased with increasing ICP power and dc-bias voltage to the substrate. However, the etch rate was decreased with increasing gas pressure. X-ray photoelectron spectroscopy and atomic force microscopy revealed Br compounds on the film surface during the etching process. It can be concluded that the high density plasma etching of GIZO films using HBr/Ar gas follows a sputtering etching mechanism with the assistance of a chemical reaction on the films.

πŸ“œ SIMILAR VOLUMES

Inductively coupled plasma etching of a
Inductively coupled plasma etching of a Pb(ZrxTi1βˆ’x)O3 thin film in a HBr/Ar plasma
✍ Chee Won Chung; Yo Han Byun; Hye In Kim πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 780 KB

The etching of Pb(Zr Ti )O (PZT) thin films was performed using HBr /Ar gas in an inductively coupled plasma. The etch rate and etch profile of the PZT films were investigated as a function of the gas concentration of the HBr /Ar mixture. In addition, the etch parameters, including coil power, dc b