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Estimating lateral straggling of impurity profiles of ions implanted into crystalline silicon

โœ Scribed by Suzuki, K.; Sudo, R.; Nagase, M.


Book ID
114538964
Publisher
IEEE
Year
2001
Tongue
English
Weight
136 KB
Volume
48
Category
Article
ISSN
0018-9383

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Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 ร‚ 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a