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ESR in heavily doped n-type silicon near a metal-nonmetal transition

โœ Scribed by Ochiai, Y. ;Matsuura, E.


Book ID
105371880
Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
591 KB
Volume
38
Category
Article
ISSN
0031-8965

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## Abstract We show for __n__ โ€type semiconductors, using Ge:As and 4__H__ โ€SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulatorโ€“metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co