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Magnetic freeze-out in doped semiconductors the metal non-metal transition in n -type InSb

✍ Scribed by Robert, J. L.; Raymond, A.; Aulombard, R. L.; Bousquet, C.

Book ID: 121016699
Publisher: Taylor and Francis Group
Year: 1980
Tongue: English
Weight: 910 KB
Volume: 42
Category: Article
ISSN: 1364-2812
DOI: 10.1080/01418638008222342

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## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co