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Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs

โœ Scribed by D.W. Elsaesser; J.E. Colon; Y.K. Yeo; R.L. Hengehold; K.R. Evans; J.S. Solomon


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
326 KB
Volume
127
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES


Oval Defects in the MBE Grown AlGaAs/InG
โœ K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 93 KB

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium