High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices

✍ Scribed by S. hiyamizu; T. Mimura

• Publisher: Elsevier Science
• Year: 1982
• Tongue: English
• Weight: 724 KB
• Volume: 56
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(82)90465-1