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Equivalent circuit model for an insulated gate bipolar transistor

โœ Scribed by Kao, C.-H.; Tseng, C.-C.; Liang, Y.-C.


Book ID
114451837
Publisher
The Institution of Electrical Engineers
Year
2005
Tongue
English
Weight
249 KB
Volume
152
Category
Article
ISSN
1350-2352

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Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of th