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Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

✍ Scribed by Ide, Toshihide; Shimizu, Mitsuaki; Shen, Xu-Qiang; Morita, Tatsuo; Ueda, Tetsuzo; Tanaka, Tsuyoshi


Book ID
118058349
Publisher
IEEE
Year
2012
Tongue
English
Weight
992 KB
Volume
59
Category
Article
ISSN
0018-9383

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Parameter extraction of a base-collector
✍ Seonghearn Lee πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation