## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation
✦ LIBER ✦
Equivalent circuit model for the electrical analysis of a spin bipolar transistor
✍ Scribed by Kim, Yong Tae ;Lee, Gab Yong
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 632 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
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