Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a new power device which combines a bipolar transistor with a MOSFET transistor. We develop a new IGBT bond graph model. The bond graph techniques give us good primary simulation results. We present in this paper the principle and the results of this modelling method.
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Crystal temperature
The charge carrier concentration The device active area Electron speed Electron, hole effort Electron, hole flow Electron, hole carrier concentration Junction depletion width Junction depletion charge Electronic charge the limit speed of carrier intrinsic doping concentration = kT/q 1. CAD TOOLS FOR POWER DEVICES AND CIRCUITS Power integrated circuits embrace a wide spectrum of different applications ranging from conventional analogue circuits that are operated at non-standard voltage levels, to smart power circuits.
CAD tools in power electronic circuits change with the quality of models used for the semiconductor devices. Models have been developed over the years for the more classical power bipolar and MOS devices, while models for new power devices such as IGBT are still in an early stage of development. One reason for this lack of CAD models for power switches is the complex physical modes of operation.
In order to contribute to the solution of this problem, we propose the application of bond graph techniques to modular modelling of power semiconductor devices. 1-3 This method is an efficient hierarchical modelling frame. The bond represents the system transient behaviour and the petri net is in charge of the system functional behaviour.