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An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

✍ Scribed by Y. Yue; J.J. Liou; I. Batarseh


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
571 KB
Volume
39
Category
Article
ISSN
0038-1101

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