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Epitaxial rare earth oxide and nitride buffers for GaN growth on Si

✍ Scribed by Dargis, Rytis; Smith, Robin; Arkun, F. Erdem; Clark, Andrew

Book ID: 121871476
Publisher: John Wiley and Sons
Year: 2014
Tongue: English
Weight: 982 KB
Volume: 11
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201300426

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## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1–__x__~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1–__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat