Epitaxial LSMO films grown on GaAs substrates with MgO buffer layer

✍ Scribed by Španková, Marianna ;Chromik, Štefan ;Vávra, Ivo ;Štrbík, Vladimír ;Liday, Jozef ;Vogrinčič, Peter ;Espinós, Juan Pedro ;Lobotka, Peter

• Book ID: 105365099
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 402 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200824398

✦ Synopsis

Abstract

La~0.67~Sr~0.33~MnO~3~ (LSMO) manganite thin films were deposited using a magnetron dc sputtering on single crystalline GaAs(001) substrates covered by MgO buffer layers with the goal to fabricate, using MEMS technology, a microbolometer operating at room temperature. The crystalline perfection of the thin film structures are characterized by X‐ray diffraction technique, rocking curve measurements, and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO. Auger Electron Spectroscopy as well as X‐ray Photoemission Spectroscopy are used to investigate compositional properties of the films. The analyses show a stoichiometric LSMO film without any contamination except of the surface where we register some traces of As, C and Mg. The temperature dependence of resistance, measured by a standard four‐probe technique, exhibits a peak at a temperature of 280 K. The maximum temperature coefficient of resistance reaches a value of ∼2.3% K^–1^ at T = 249 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)