Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th
β¦ LIBER β¦
YBa2Cu3O7 films grown on epitaxial MgO buffer layers on sapphire
β Scribed by J. Talvacchio; G.R. Wagner; H.C. Pohl
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 314 KB
- Volume
- 162-164
- Category
- Article
- ISSN
- 0921-4534
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A new type of buffer layer, based on Nb doped YBa2Cu307 material, has been used for high quality HTSC ultrathin film fabrication. This new material represents a dielectric continuum of YBa2NbO 6 phase with YBa2Cu307 phase inclusions. The later serve as nuclei while growing ultrathin YBa2Cu307 film o