Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th
YBa2Cu3O7-x thin films on double buffer layers on Si(100)
✍ Scribed by R. Aguiar; F. Sánchez; D. Peiró; C. Ferrater; M. Varela
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 154 KB
- Volume
- 235-240
- Category
- Article
- ISSN
- 0921-4534
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