Ultrathin YBa2Cu3O7 films with YBa2Cu2.7Nb0.3O7 buffer layer
β Scribed by I. Grekhov; V. Borevich; L. Delimova; I. Liniychuk; A. Lyublinsky
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 108 KB
- Volume
- 235-240
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
A new type of buffer layer, based on Nb doped YBa2Cu307 material, has been used for high quality HTSC ultrathin film fabrication. This new material represents a dielectric continuum of YBa2NbO 6 phase with YBa2Cu307 phase inclusions. The later serve as nuclei while growing ultrathin YBa2Cu307 film on this buffer layer. As an example we have fabricated 6 unit cell YBa2Cu307 film showing transition into a superconducting state with onset temperature 87K ,zero resistance temperature 80K and critical current density jc(77 K) = 2" 105 A/era 2.
π SIMILAR VOLUMES
We present results of quasiparticle tunnelling experiments on YBa2CuaO7 / CeO2/YBa2CuaO7 ramptype junctions. To account for the influence of the V-shaped background conductance, that is seen m most junctions, a simple method is developed that is capable of describing the background with hardly any d