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Epitaxial growth of β-FeSi2 on silicon (111): a real-time RHEED analysis

✍ Scribed by J. Chevrier; V. Le Thanh; S. Nitsche; J. Derrien

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
847 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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✍ Yakovlev, N. L.; Banshchikov, A. G.; Moisseeva, M. M.; Sokolov, N. S.; Beeby, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 182 KB 👁 1 views

Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i