✦ LIBER ✦

Epitaxial growth of thin films of V2VI3semiconductors

✍ Scribed by B. Gardes; J. Ameziane; G. Brun; J. C. Tedenac; A. Boyer

Publisher: Springer
Year: 1994
Tongue: English
Weight: 267 KB
Volume: 29
Category: Article
ISSN: 0022-2461
DOI: 10.1007/bf00356828

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✦ Synopsis

Epitaxial growth conditions of V2Vl 3 semiconductors have been studied using the molecular beam epitaxy technique, which was applied to the growth of SbzTe3 on Bi2Te 3 substrates. These substrates were prepared by gradient freeze method in a Bridgman apparatus. Ingots were cleaved along the (0001) plane. The deposition conditions have been studied as a function of two parameters: substrate temperature and flux ratios of the two elements. The quality of these epilayers was controlled by SEM and X-ray diffraction. Epilayers of good quality have been obtained for the first time.

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