Epitaxial growth conditions of V2Vl 3 semiconductors have been studied using the molecular beam epitaxy technique, which was applied to the growth of SbzTe3 on Bi2Te 3 substrates. These substrates were prepared by gradient freeze method in a Bridgman apparatus. Ingots were cleaved along the (0001) p
Synthesis of some V2VI3 semiconductors
โ Scribed by A. Boyer; E. Charles
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 216 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0040-6090
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almost All The Semiconductors Of Practical Interest Are The Group-iv, Iii-v And Ii-vi Semiconductors And The Range Of Technical Applications Of Such Semiconductors Is Extremely Wide. the Purpose Of This Book Is Twofold: * to Discuss The Key Properties Of The Group-iv, Iii-v And Ii-vi Semiconductor
almost All The Semiconductors Of Practical Interest Are The Group-iv, Iii-v And Ii-vi Semiconductors And The Range Of Technical Applications Of Such Semiconductors Is Extremely Wide. the Purpose Of This Book Is Twofold: * to Discuss The Key Properties Of The Group-iv, Iii-v And Ii-vi Semiconductor
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