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Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD

✍ Scribed by Zhen Zhu; Jin Ma; Caina Luan; Wei Mi; Yu Lv


Book ID
113787518
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
862 KB
Volume
47
Category
Article
ISSN
0025-5408

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Epitaxial growth of (1 0 0)-or
✍ Kensuke Akiyama; Teiko Kadowaki; Yasuo Hirabayashi; Mamoru Yoshimoto; Hiroshi Fu πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 815 KB

a b s t r a c t (1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-Si