Epitaxial growth of (1 0 0)-or
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Kensuke Akiyama; Teiko Kadowaki; Yasuo Hirabayashi; Mamoru Yoshimoto; Hiroshi Fu
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Article
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2011
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Elsevier Science
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English
β 815 KB
a b s t r a c t (1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-Si