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Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

✍ Scribed by Kristina Buchholt; Per Eklund; Jens Jensen; Jun Lu; Anita Lloyd Spetz; Lars Hultman


Book ID
113898970
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
408 KB
Volume
64
Category
Article
ISSN
1359-6462

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Molecular dynamics methods have been employed to study epitaxial recrystallization and the amorphous-to-crystalline (a-c) transition in 4H-SiC along the [0 0 0 1] direction, with simulation times of up to a few hundred nanoseconds and at temperatures of 1500 and 2000 K. The results are compared with