Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)
β Scribed by Kristina Buchholt; Per Eklund; Jens Jensen; Jun Lu; Anita Lloyd Spetz; Lars Hultman
- Book ID
- 113898970
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 408 KB
- Volume
- 64
- Category
- Article
- ISSN
- 1359-6462
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a b s t r a c t (1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-Si
Molecular dynamics methods have been employed to study epitaxial recrystallization and the amorphous-to-crystalline (a-c) transition in 4H-SiC along the [0 0 0 1] direction, with simulation times of up to a few hundred nanoseconds and at temperatures of 1500 and 2000 K. The results are compared with