MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ε½ . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ε½ . deposition. The composition of the films was determined by Auger electr
Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure
β Scribed by S Entani; M Kiguchi; K Saiki; A Koma
- Book ID
- 108341760
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 649 KB
- Volume
- 247
- Category
- Article
- ISSN
- 0022-0248
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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al