Gallium arsenide duster ions were generated by laser vaporization in a supersonic nozzle, trapped in a Fourier transform ioncyclotron resonance mass spectrometer, and allowed to react with NH3 forming addition complexes with the cluster cations. With excess NH3, GaxAsy(NH3)~ + with the same GaAs com
Enumeration of the isomers of the gallium arsenide clusters (GamAsn)
โ Scribed by K. Balasubramanian
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 574 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0009-2614
No coin nor oath required. For personal study only.
โฆ Synopsis
Possible isomers of the gallium arsenide clusters of the formula Ga,,As, containing up to ten atoms and icosahedral clusters are enumerated. The possible parent polyhedrons up to ten vertices are constructed and then Pdlya's theorem is applied to each polyhedron to calculate the generating functions for the enumeration of the isomers of gallium arsenide clusters of the formula Ga,,,As,. The distributions of clusters of Ga,,As, clusters observed by Smalley and co-workers using the laser vaporization method is explained. Specifically, generating functions obtained here together with the criteria of bond strengths explain the observed deviations from binomial distributions for smaller clusters.
๐ SIMILAR VOLUMES
The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo
Changes in the structural stability of lysozyme, upon adsorption to silica and gallium arsenide (GaAs) surfaces, are studied using a combination of hydrogen/deuterium exchange and matrix-assisted laser desorption/ionization mass spectrometry. This relatively new method offers a tool for directly mon