Possible isomers of the gallium arsenide clusters of the formula Ga,,As, containing up to ten atoms and icosahedral clusters are enumerated. The possible parent polyhedrons up to ten vertices are constructed and then Pdlya's theorem is applied to each polyhedron to calculate the generating functions
Isomers of gallium arsenide cluster ions
β Scribed by Lihong Wang; L.P.F. Chibante; F.K. Tittel; R.F. Curl; R.E. Smalley
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 282 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
Gallium arsenide duster ions were generated by laser vaporization in a supersonic nozzle, trapped in a Fourier transform ioncyclotron resonance mass spectrometer, and allowed to react with NH3 forming addition complexes with the cluster cations. With excess NH3, GaxAsy(NH3)~ + with the same GaAs composition (x+y) was observed with several values ofz. This observation of different numbers of chemisorbed NH3 molecules at completion is explained in terms of the existence of multiple isomers of positive GaAs clusters. Negative GaxAsy clusters were found to be inert toward NH3.
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Electronic structures and stabilities of Ga,As, clusters (n= l-3) are explored by means of accurate quantum-chemical calculations using ab initio effective core potentials (ECP). Our results on GaAs and Ga2As2 are in good agreement with the conclusions from previous studies on these systems. We find
The static electric dipole polarizabilities of isolated Ga,As, clusters with N + M = 4-30 atoms and approximatly 1 : 1 composition have been measured in dependence of the cluster size N + M by means of a molecular beam deflection technique. A striking size-dependent behaviour has been observed for s