The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometly. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated with a citric acid buffer. To convert the arsen
Direct ion-selective determination of boron in gallium arsenide
β Scribed by Pietro Lanza
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 529 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1040-0397
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