Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
β Scribed by V. Donchev; E. S. Moskalenko; K. F. Karlsson; P. O. Holtz; B. Monemar; W. V. Schoenfeld; J. M. Garcia; P. M. Petroff
- Book ID
- 111445496
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2006
- Tongue
- English
- Weight
- 273 KB
- Volume
- 48
- Category
- Article
- ISSN
- 1063-7834
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Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u
We summarize here results of calculations and experiments on electron and valence hole states in a single pair of vertically stacked and electronically coupled InAs self-assembled quantum dots. In perfectly aligned quantum dots one can relate an electron-hole complex to a pair of entangled qubits. T