Enhancement of c-axis texture of AlN films by substrate implantation

✍ Scribed by C.H. Chen; J.M. Yeh; J. Hwang

• Book ID: 103860316
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 237 KB
• Volume: 237
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.05.015

✦ Synopsis

Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm À2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of $10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1).