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C-axis orientation of AlN films prepared by ECR PECVD

✍ Scribed by Ju-Won Soh; Seong-Soo Jang; In-Seop Jeong; Won-Jong Lee


Book ID
107864818
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
647 KB
Volume
279
Category
Article
ISSN
0040-6090

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Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm Γ€2 , respectively. The c-axis texture of